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Posts tagged with "memory"

TOSHIBA TO LAUNCH WORLD'S FIRST 64GB SDXC CARD

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Toshiba Corporation, a leading innovator in NAND flash memory technologies and solutions, and Toshiba America Electronic Components, Inc. (TAEC), a North American subsidiary, today announced the launch of the world's first 64GB1 SDXC Memory Card2 capable of operating at the world's fastest data transfer rate for reading and writing to a flash memory card.

The new card is compliant with the new SD Memory Standard, Ver. 3.00, UHS104. Toshiba also extended its industry leadership in memory card solutions by unveiling 32GB and 16GB SDHC Memory Cards compliant with the world's fastest data transfer rate. Samples of the new SDXC Memory Cards will be available this November, and samples of the new SDHC Memory Cards will be available in December.

Source: http://www.toshiba.com/taec/news/press_releases/2009/memy_09_572.jsp

100 DVDs on one disc within three years?

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Researchers at General Electric claim to have made a key breakthrough in optical data storage that could lead to commercial discs holding the equivalent of 100 DVDs within three years. The new technology is based on the physics of holograms, which enable information to be packed far more densely than with established recording formats. A new device will be needed to play these discs but this will be compatible with established formats like CDs, DVDs and Blu-ray discs, say the US-based team.

Invented over 50 years ago, holograms are now widely deployed as authentication tags, and can be found everywhere from credit cards and passports to cosmetics and pharmaceuticals. These futuristic surfaces can be generated in photosensitive materials by applying two coherent light beams: an “object” beam carrying information about a material’s structure; and a reference beam that records the desired pattern on the hologram. The resulting 3D interference pattern is usually stored as changes in refractive index of the recording material, which can be viewed when the material is illuminated by daylight.

Source: http://physicsworld.com/cws/article/news/39565

Billion-year ultra-dense memory chip developed

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There’s always been an inverse relationship between density and durability when it comes to data storage. Today’s silicon memory chips contain a lot of density, but with a lifespan of just a few decades, they lack durability. Yet primitive forms of storage such as information carved in stone are highly durable, however, they are not dense. Now this long-standing negative correlation between density and durability has been blow to bits with the development of a new memory device that can pack a trillion bits of data into one square inch of medium and retain that data for a billion years.

Led by physicist Alex Zettl, researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley, have created a digital electromechanical memory device that consists of a crystalline iron nanoparticle shuttle approximately 1/50,000th the width of a human hair enclosed within the hollow of a multiwalled carbon nanotube. The shuttle can be moved reversibly via a low-voltage electrical write signal and can be positioned with nanoscale precision, forming the basis of a binary sequence.

Source: http://blogs.zdnet.com/emergingtech/?p=1571

Quick thinking

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A Lancaster University physicist has been given a Royal Society Brian Mercer Feasibility Award to support his work exploring the development of a novel type of computer memory based on the use of quantum dots.

'Conventional silicon-based computer memory will soon reach its limit, so we really need to find a solution with better performance,' said Dr Manus Hayne.

Flash memory, which is commonly used in USB drives, is a non-volatile memory based on charge-storage in an electrically isolated ‘floating gate’ placed between the conductive channel used for readout and the ‘control gate’.

Flash has been the memory technology driver since 2003, taking the leading position from dynamic random-access memory (DRAM), which is the capacitive-based memory used in PCs.

However, Hayne adds, the performance of Flash is rather mediocre. Charging up the floating gate requires pushing charge across the SiO2 barriers that isolate it, making writing very slow and, eventually, damaging it.

Hayne's quantum dot (QD) memory, on the other hand, is a new memory concept that avoids the intrinsic problems associated with pushing charge through an insulating barrier.

Source: http://www.theengineer.co.uk/Articles/311501/Quick+thinking.htm

A New Route to Terabit Memory

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The self-assembling of materials known as block copolymers could provide a low-cost, efficient way to fabricate ultra-high-density computer memory. Block copolymers, which are made of chemically different polymers linked together, can arrange themselves into arrays of nanoscale dots on surfaces, which could be used as templates for creating tiny magnetic bits that store data on hard disks. Until now, though, there was no simple, quick way to coax the block copolymer to make the desired arrays over large areas.

Researchers at the University of California, Berkeley, and the University of Massachusetts Amherst have found a simple way to coat square inches of substrate with block copolymers. The highly ordered pattern formed by the copolymers could be used to create hard disks with 10 terabits squeezed into a square inch, the researchers report this week in Science.

Source: http://www.technologyreview.com/article/22209/

Toshiba Develops World's Highest-Bandwidth, Highest Density Non-volatile RAM

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Toshiba Corporation today announced the prototype of a new FeRAM -- Ferroelectric Random Access Memory -- that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and read and write speeds of 1.6-gigabytes a second, the most advanced combination of performance and density yet achieved. Full details of the new FeRAM was presented at the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, USA.

The new FeRAM modifies Toshiba's original chainFeRAMTM architecture, which significantly contributes to chip scaling, with a new architecture that prevents cell signal degradation, the usual tradeoff from chip scaling. The combination realizes an upscaled FeRAM with a density of 128-megabit. Furthermore, a new circuit that predicts and controls the fluctuations of power supply supports high-speed data transfers. This allowed integration of DDR2 interface to maximize data transfers at a high throughput at low power consumption, realizing read and write speeds of 1.6 gigabytes a second. In developing the new FeRAM, Toshiba broke its own record of 32-megabit density and 200-megabit data transfers, pushing performance to eight times faster than the transfer rate and density of the previous records and the fastest speed of any non-volatile RAM.

Source: http://www.physorg.com/news153420638.html

A CPU that Stores Data

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Conventional magnetic storage devices used in consumer electronics, like computer hard drives, MP3 players, and other metallic based products, have separate data storage and execution units. At least part of the delay (or slowness) generated by current products is due to the relatively long way data has to go - being retrieved from the storage, passed to the central processing unit (CPU) for processing and execution, and back again to the storage unit. These back and forth transfers, can dramatically hinder the general performance of the system.

However, the new technology developed by NIST in collaboration with the Korea University and the University of Notre Dame, have proven that thin magnetic layers of semiconductor material could demonstrate antiferromagnetic coupling, where one layer spontaneously lines up its magnetic pole in the opposite direction to the next magnetic layer.

Source: http://thefutureofthings.com/news/6354/a-cpu-that-stores-data.html

Laser-Hard Drives in the Making

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Recent advancements might finally open the door to a new storage technology that will merge optical and magnetic technologies, leading to high capacity storage devices reaching speeds thousands of times that of existing storage technologies, while boasting improved reliability.

In 2006 Dr. Daniel Stanciu (then working on his Ph.D.) and Dr. Fredrik Hansteen discovered a way to use light to change the polarity of a magnet. Even more impressive was the fact that it only took an extremely short laser pulse of about 40 femtoseconds (an unimaginably short time equal to one millionth of a nanosecond) in order to switch a magnet. According to Stanciu, back in 2006, conventional wisdom in the field considered this feat to be impossible. Even Stanciu’s Professor did not believe the young researcher until the latter demonstrated the switch in the lab.

Source: http://thefutureofthings.com/news/6186/laser-hard-drives-in-the-making.html

New 'Molecular Memory' Only 10 Atoms Thick: Massive Storage Possible

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A team at Rice University has determined that a strip of graphite only 10 atoms thick can serve as the basic element in a new type of memory, making massive amounts of storage available for computers, handheld media players, cell phones and cameras.

In new research available online in Nature Materials, Rice professor James Tour and postdoctoral researchers Yubao Li and Alexander Sinitskii describe a solid-state device that takes advantage of the conducting properties of graphene. Tour said such a device would have many advantages over today’s state-of-the-art flash memory and other new technologies.

Graphene memory would increase the amount of storage in a two-dimensional array by a factor of five, he said, as individual bits could be made smaller than 10 nanometers, compared to the 45-nanometer circuitry in today’s flash memory chips. The new switches can be controlled by two terminals instead of three, as in current chips.

Source: http://www.sciencedaily.com/releases/2008/11/081121151719.htm

News Bits About Qubits: Scientists Store and Retrieve Data Inside an Atom

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Another step towards quantum computing – the Holy Grail of data processing and storage – was achieved when an international team of scientists that included researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) were able to successfully store and retrieve information using the nucleus of an atom.

In a paper entitled: “Solid-state quantum memory using the 31P nuclear spin,” published in the October 23 issue of the journal Nature, the team described an experiment in which exceptionally pure and isotopically controlled crystals of silicon were precisely doped with phosphorus atoms. Quantum information was processed in phosphorus electrons, transferred to phosphorus nuclei, then subsequently transferred back to the electrons. This is the first demonstration that a single atomic nucleus can serve as quantum computational memory.

Source: http://newscenter.lbl.gov/press-releases/2008/10/23/news-bits-about-qubits-scientists-store-and-retrieve-data-inside-an-atom/
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