Samsung: Will not increase the production of DRAM particle blindly
Friday, February 4, 2011 9:02:53 AM
It is reported, the semi-conductive business president of Samsung represents right five Xuan while attending GSA memory conference recently, Samsung will not expand DRAM particle output blindly, but will pay attention to products value, stabilize the product cost. The brilliant semi-conductive president FrankHuang of strength holds the same view too.
Right five Xuan think the intersection of DRAM and market demand of first half of the year expect, strengthen, but focal point of the second half year should put at keeping the intersection of DRAM and the intersection of particle and steady price. He supervises the pursuit productivity that DRAM manufacturers do not need simply, but should put attention in the research and development of craft staging and advanced products.
The brilliant semi-conductive president FrankHuang of strength shows too, it is supply exceeds demand that the increase of the productivity can only cause, the product cost drops. DRAM slightly urgent and useful to development in the future in supply of market, 1GbDRAM the intersection of particle and price maintain 2.5-3 dollars at may stabilize the equilibrium of supply and demand of the market.
Since 2005-2007 years, DRAM manufacturers have invested the huge fund to increase the productivity, this causes DRAM for far greater than askinging, the price slumps. According to statistics of the market survey company iSuppli, since 2007, the operation total loss of DRAM manufacturer has reached 16 billion dollars.
Right five Xuan claim 50nm main process for preparing craft of particle, 2GbDRAM of Samsung, they plan to begin to adopt the 20nm grade craft to produce 8GbDRAM particle in 2012 also. As to the intersection of NAND and flashing memory, Samsung utilize the intersection of 30nm grade and craft produce the intersection of 32Gb and particle mainly at present, staging to 10nm 2012 year.


